Samsung has begun mass-production of world’s fastest 4GB HBM DRAM
Tue 19 Jan 2016
Samsung announced today that it has begun production of the world’s first 4GB DRAM package based on the 2nd-gen High Bandwidth Memory (HBM2) interface.
The manufacturing advance is intended for enterprise servers and other high performance computing environments. The new chips outperform current equivalents by a factor of seven. Samsung’s senior VP of Memory Marketing Sewon Chun said in a statement at the company’s site:
“By mass producing next-generation HBM2 DRAM, we can contribute much more to the rapid adoption of next-generation HPC systems by global IT companies… Also, in using our 3D memory technology here, we can more proactively cope with the multifaceted needs of global IT, while at the same time strengthening the foundation for future growth of the DRAM market.”
The new DRAM uses Samsung’s 20-nanometer process technology, and follows up on the company’s introduction of 128GB 3D TSV DDR4 registered dual inline memory (RDIMM) in October of last year.
The new package features 256GBps of bandwidth, doubling the capacity of an HBM1 solution, and a seven-fold increase on the 36GBps bandwidth throughput of a current 4GB GDDR5 DRAM chip, currently rated at 9GBps.
The company intends to release an 8GB HBM2 DRAM solution in 2016, offering manufacturers a space-saving exceeding 95%.
High bandwidth memory represents the RAM interface for 3D IC integrated circuit dies which employ through-silicon vias (TSVs) to reduce manufacturing sizes and achieve performance benefits in low-power scenarios. The HBM standard was adopted by the JEDEC Solid State Technology Association in October of 2013. Under the HBM standard a distributed interface is divided into separate, independent and non-synchronous channels using a wide interface architecture. Each of the channel interfaces furnishes a 128b data bus which operates at DDR data rates.
HBM2 was ratified as a standard only as recently as the 12th of January this year.